Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure

H. Nohira; Y. Kon; K. Kitamura; M. Kouda; K. Kakushima; H. Iwai

doi:10.1149/1.3206630

Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure

H. Nohira^*, Y. Kon, K. Kitamura, M. Kouda, K. Kakushima, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce⁴⁺ to Ce³⁺ by PDA in N₂ at and above 500°C and changes from Ce³⁺ to Ce⁴⁺ by PDA in O ₂ at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages	321-326
Number of pages	6
Edition	6
DOIs	https://doi.org/10.1149/1.3206630
State	Published - 2009
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 5 Oct 2009 → 7 Oct 2009

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country	Austria
City	Vienna
Period	5/10/09 → 7/10/09

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Nohira, H., Kon, Y., Kitamura, K., Kouda, M., Kakushima, K., & Iwai, H. (2009). Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 321-326). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206630

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title = "Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure",

abstract = "We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500°C and changes from Ce3+ to Ce4+ by PDA in O 2 at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.",

author = "H. Nohira and Y. Kon and K. Kitamura and M. Kouda and K. Kakushima and H. Iwai",

year = "2009",

doi = "10.1149/1.3206630",

language = "English",

isbn = "9781566777438",

series = "ECS Transactions",

number = "6",

pages = "321--326",

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note = "null ; Conference date: 05-10-2009 Through 07-10-2009",

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Nohira, H, Kon, Y, Kitamura, K, Kouda, M, Kakushima, K & Iwai, H 2009, Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, pp. 321-326, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 5/10/09. https://doi.org/10.1149/1.3206630

Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure. / Nohira, H.; Kon, Y.; Kitamura, K.; Kouda, M.; Kakushima, K.; Iwai, H.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. 2009. p. 321-326 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure

AU - Nohira, H.

AU - Kon, Y.

AU - Kitamura, K.

AU - Kouda, M.

AU - Kakushima, K.

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N2 - We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500°C and changes from Ce3+ to Ce4+ by PDA in O 2 at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.

AB - We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500°C and changes from Ce3+ to Ce4+ by PDA in O 2 at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.

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