@inproceedings{7c505a7bf4f748ef99e66e3fbfc9b2df,
title = "Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure",
abstract = "We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500°C and changes from Ce3+ to Ce4+ by PDA in O 2 at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.",
author = "H. Nohira and Y. Kon and K. Kitamura and M. Kouda and K. Kakushima and H. Iwai",
year = "2009",
doi = "10.1149/1.3206630",
language = "English",
isbn = "9781566777438",
series = "ECS Transactions",
number = "6",
pages = "321--326",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",
edition = "6",
note = "null ; Conference date: 05-10-2009 Through 07-10-2009",
}