Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure

H. Nohira*, Y. Kon, K. Kitamura, M. Kouda, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500°C and changes from Ce3+ to Ce4+ by PDA in O 2 at 300°C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500°C.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages321-326
Number of pages6
Edition6
DOIs
StatePublished - 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period5/10/097/10/09

Fingerprint Dive into the research topics of 'Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure'. Together they form a unique fingerprint.

  • Cite this

    Nohira, H., Kon, Y., Kitamura, K., Kouda, M., Kakushima, K., & Iwai, H. (2009). Annealing-temperature dependence of compositional depth profiles and chemical bonding states of CeOx/LaOx/Si and LaOx/CeOx/Si structure. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 321-326). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206630