Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Ruofan Fu, Jianwen Yang, Qun Zhang*, Wei Chiao Chang, Chien Min Chang, Po-Tsun Liu, Han Ping D. Shieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm 2 /V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages334-336
Number of pages3
ISBN (Print)9781538637111
DOIs
StatePublished - 26 Jul 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18

Keywords

  • a-IZWO
  • TFTs and Annealing

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