@inproceedings{7b4794b10edb42cbba4717c412cc7928,
title = "Annealing condition dependence of electrical characteristics for Dy2O3/Si(100) structures",
abstract = "In this paper, we report on the annealing condition dependence of electrical characteristics for Dy2O3 thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.",
author = "Junichi Taguchi and Hiroyuki Yamamoto and Junichi Tonotani and Ohmi, {Shun Ichiro} and Hiroshi Iwai",
year = "2002",
doi = "10.1109/ESSDERC.2002.195000",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "591--594",
editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "null ; Conference date: 24-09-2002 Through 26-09-2002",
}