Annealing condition dependence of electrical characteristics for Dy2O3/Si(100) structures

Junichi Taguchi; Hiroyuki Yamamoto; Junichi Tonotani; Shun Ichiro Ohmi; Hiroshi Iwai

doi:10.1109/ESSDERC.2002.195000

Annealing condition dependence of electrical characteristics for Dy₂O₃/Si(100) structures

Junichi Taguchi^*, Hiroyuki Yamamoto, Junichi Tonotani, Shun Ichiro Ohmi, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this paper, we report on the annealing condition dependence of electrical characteristics for Dy₂O₃ thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Elena Gnani, Giorgio Baccarani, Massimo Rudan
Publisher	IEEE Computer Society
Pages	591-594
Number of pages	4
ISBN (Electronic)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.195000
State	Published - 2002
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sep 2002 → 26 Sep 2002

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	32nd European Solid-State Device Research Conference, ESSDERC 2002
Country	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Access to Document

10.1109/ESSDERC.2002.195000

Link to publication in Scopus

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Taguchi, J., Yamamoto, H., Tonotani, J., Ohmi, S. I., & Iwai, H. (2002). Annealing condition dependence of electrical characteristics for Dy₂O₃/Si(100) structures. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 591-594). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.195000

Taguchi, Junichi ; Yamamoto, Hiroyuki ; Tonotani, Junichi ; Ohmi, Shun Ichiro ; Iwai, Hiroshi. / Annealing condition dependence of electrical characteristics for Dy₂O₃/Si(100) structures. European Solid-State Device Research Conference. editor / Elena Gnani ; Giorgio Baccarani ; Massimo Rudan. IEEE Computer Society, 2002. pp. 591-594 (European Solid-State Device Research Conference).

@inproceedings{7b4794b10edb42cbba4717c412cc7928,

title = "Annealing condition dependence of electrical characteristics for Dy2O3/Si(100) structures",

abstract = "In this paper, we report on the annealing condition dependence of electrical characteristics for Dy2O3 thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.",

author = "Junichi Taguchi and Hiroyuki Yamamoto and Junichi Tonotani and Ohmi, {Shun Ichiro} and Hiroshi Iwai",

year = "2002",

doi = "10.1109/ESSDERC.2002.195000",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "591--594",

editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",

booktitle = "European Solid-State Device Research Conference",

address = "United States",

note = "null ; Conference date: 24-09-2002 Through 26-09-2002",

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Taguchi, J, Yamamoto, H, Tonotani, J, Ohmi, SI & Iwai, H 2002, Annealing condition dependence of electrical characteristics for Dy₂O₃/Si(100) structures. in E Gnani, G Baccarani & M Rudan (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 591-594, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.195000

Annealing condition dependence of electrical characteristics for Dy₂O₃/Si(100) structures. / Taguchi, Junichi; Yamamoto, Hiroyuki; Tonotani, Junichi; Ohmi, Shun Ichiro; Iwai, Hiroshi.

European Solid-State Device Research Conference. ed. / Elena Gnani; Giorgio Baccarani; Massimo Rudan. IEEE Computer Society, 2002. p. 591-594 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Annealing condition dependence of electrical characteristics for Dy2O3/Si(100) structures

AU - Taguchi, Junichi

AU - Yamamoto, Hiroyuki

AU - Tonotani, Junichi

AU - Ohmi, Shun Ichiro

AU - Iwai, Hiroshi

PY - 2002

Y1 - 2002

N2 - In this paper, we report on the annealing condition dependence of electrical characteristics for Dy2O3 thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.

AB - In this paper, we report on the annealing condition dependence of electrical characteristics for Dy2O3 thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.

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U2 - 10.1109/ESSDERC.2002.195000

DO - 10.1109/ESSDERC.2002.195000

M3 - Conference contribution

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T3 - European Solid-State Device Research Conference

SP - 591

EP - 594

BT - European Solid-State Device Research Conference

A2 - Gnani, Elena

A2 - Baccarani, Giorgio

A2 - Rudan, Massimo

PB - IEEE Computer Society

Y2 - 24 September 2002 through 26 September 2002

ER -

Taguchi J, Yamamoto H, Tonotani J, Ohmi SI, Iwai H. Annealing condition dependence of electrical characteristics for Dy₂O₃/Si(100) structures. In Gnani E, Baccarani G, Rudan M, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2002. p. 591-594. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2002.195000