Annealing condition dependence of electrical characteristics for Dy2O3/Si(100) structures

Junichi Taguchi*, Hiroyuki Yamamoto, Junichi Tonotani, Shun Ichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, we report on the annealing condition dependence of electrical characteristics for Dy2O3 thin films deposited by MBE. Low temperature long time anneal decreased leakage current density with little interfacial layer growth. Excellent improvements of electrical characteristics and interfacial properties were confirmed.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages591-594
Number of pages4
ISBN (Electronic)8890084782
DOIs
StatePublished - 2002
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: 24 Sep 200226 Sep 2002

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period24/09/0226/09/02

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