The in-plane g-factors of electron and hole spins (Formula presented.), confined in the individual InAs/GaAs quantum rings (QRs) were investigated by using experimental and theoretical approaches. From the measurements, we found that the experimentally obtained (Formula presented.) varies largely from QR to QR, while the variation in (Formula presented.) is small. In addition, the in-plane (x−y) and the out-of-plane (x−z) anisotropies in hole g-factor were obviously confirmed while the electron g-factor exhibits isotropic natures in both cases. From the model calculations, the effects of the shape anisotropies and the uniaxial stress were examined. The shape anisotropy in QRs modifies the spatial distributions of hole wavefunctions. Thus, it brings the resultant changes in the degree of valence-band mixing and (Formula presented.), and combined with uniaxial stress, a larger modulation in (Formula presented.) was achieved. Although more detailed discussions are necessary at this stage, our findings will give valuable information for the g-factor control in semiconductor nanostructures.
- quantum rings
- valence-band mixing