Anisotropic grain growth to eliminate bonding interfaces in direct copper-to-copper joints using <111>-oriented nanotwinned copper films

Yi Cheng Chu, Chih Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Grain growth in Cu-to-Cu bonding was investigated at 250 °C and 300 °C. With highly [111]-oriented nanotwinned Cu (nt-Cu) films, bonding can be achieved with the aid of high diffusivity on Cu (111) surfaces at 250 °C for 1 h. Yet, recrystallization did not occur at this annealing condition. However, recrystallization and anisotropic grain growth took place at 250 °C for 2 h and 300 °C for 0.5 h. The bonding interface was eliminated and extremely large Cu grains grew. The temperature of 250 °C is the lowest temperature ever reported for elimination of the bonding interface. For comparison, the Cu joints fabricated by ordinary Cu films did not have obvious grain growth at 300 °C for 0.5 h.

Original languageEnglish
Pages (from-to)55-58
Number of pages4
JournalThin Solid Films
Volume667
DOIs
StatePublished - 1 Dec 2018

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