Angle-resolved reflectance spectroscopy of passivated trapezoidcorn nanostructures for crystalline silicon photovoltaics

Ping Chen Tseng*, Hsin Chu Chen, Min An Tsai, Hao-Chung Kuo, Peichen Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we demonstrate an omnidirectional and broadband antireflective nanostructures incorporating a silicon nitrides (SiNx) passivation layer. The antireflective trapezoid-cone nanostructures are fabricated on a silicon wafer using polystyrene colloidal lithography with 550nm in height and then passivated with SiNx in different thicknesses to serve as the antireflection layer for silicon photovoltaics. The angle-resolved reflectance spectroscopy reveals that the trapezoid-cone nanostructures with an 80-nm-thick SiNx passivation layer effectively suppressed the Fresnel reflection over a broad spectral range and large angle of incidence (AOI). The AM1.5g weighted reflectance from 400 nm to 1000 nm is as low as 4.2% at normal incidence and <9.5% up to an AOI of 60°, which is much superior to a conventional textured silicon substrate with passivation.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages3229-3232
Number of pages4
DOIs
StatePublished - 20 Dec 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

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