Analytical quantum-confinement model for short-channel gate-all-around MOSFETs under subthreshold region

Yu Sheng Wu*, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.

Original languageEnglish
Pages (from-to)2720-2725
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume56
Issue number11
DOIs
StatePublished - 9 Oct 2009

Keywords

  • Gate-all-around (GAA)
  • MOSFET
  • Quantum effects
  • Short-channel effect

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