K. Mayaram*, J. Lee, T. Y. Chan, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1986

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