The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. An analytical perspective is presented of the field distribution, cause of the double-peak characteristics of I//s //u //b , synthesis of LDD doping profile, effect of source/drain offset, and the short-channel effect in LDD devices. This perspective supplements experimental studies and computer simulations of LDDD structures.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1986|