Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS

Ren Jia Chan, Jyh-Chyurn Guo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (L dc∼150pH, Qmax∼17, fSR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

Original languageEnglish
Title of host publication2014 IEEE MTT-S International Microwave Symposium, IMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479938698
DOIs
StatePublished - 1 Jan 2014
Event2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
Duration: 1 Jun 20146 Jun 2014

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2014 IEEE MTT-S International Microwave Symposium, IMS 2014
CountryUnited States
CityTampa, FL
Period1/06/146/06/14

Keywords

  • Analytical model
  • mm-wave inductor
  • proximity
  • skin

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    Chan, R. J., & Guo, J-C. (2014). Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS. In 2014 IEEE MTT-S International Microwave Symposium, IMS 2014 [6848474] (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2014.6848474