Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS

Ren Jia Chan; Jyh-Chyurn Guo

doi:10.1109/MWSYM.2014.6848474

Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS

Ren Jia Chan, Jyh-Chyurn Guo

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z _in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z_in) and Q measured from mm-wave inductor (L _dc∼150pH, Q_max∼17, f_SR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

Original language	English
Title of host publication	2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479938698
DOIs	https://doi.org/10.1109/MWSYM.2014.6848474
State	Published - 1 Jan 2014
Event	2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States Duration: 1 Jun 2014 → 6 Jun 2014

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Country	United States
City	Tampa, FL
Period	1/06/14 → 6/06/14

Keywords

Analytical model
mm-wave inductor
proximity
skin

Access to Document

10.1109/MWSYM.2014.6848474

Link to publication in Scopus

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Chan, R. J., & Guo, J-C. (2014). Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS. In 2014 IEEE MTT-S International Microwave Symposium, IMS 2014 [6848474] (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2014.6848474

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abstract = "Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (L dc∼150pH, Qmax∼17, fSR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.",

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Chan, RJ & Guo, J-C 2014, Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS. in 2014 IEEE MTT-S International Microwave Symposium, IMS 2014., 6848474, IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE MTT-S International Microwave Symposium, IMS 2014, Tampa, FL, United States, 1/06/14. https://doi.org/10.1109/MWSYM.2014.6848474

Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS. / Chan, Ren Jia; Guo, Jyh-Chyurn.

2014 IEEE MTT-S International Microwave Symposium, IMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6848474 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (L dc∼150pH, Qmax∼17, fSR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

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