@inproceedings{ae9891b7dfb44315a00976d5789f7a33,
title = "Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS",
abstract = "Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (L dc∼150pH, Qmax∼17, fSR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.",
keywords = "Analytical model, mm-wave inductor, proximity, skin",
author = "Chan, {Ren Jia} and Jyh-Chyurn Guo",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/MWSYM.2014.6848474",
language = "English",
isbn = "9781479938698",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014",
address = "United States",
note = "null ; Conference date: 01-06-2014 Through 06-06-2014",
}