Analytical modeling of flicker noise in halo implanted MOSFETs

Harshit Agarwal, Sourabh Khandelwal, Sagnik Dey, Chen-Ming Hu, Yogesh Singh Chauhan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.

Original languageEnglish
Article number7089170
Pages (from-to)355-360
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number4
DOIs
StatePublished - 1 Jul 2015

Keywords

  • BSIM6
  • Compact Model
  • Flicker Noise
  • Halo Doping

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