Analytical Model to Evaluate the Role of Deep Trap State in the Reliability of NAND Flash Memory and Its Process Dependence

B. J. Yang, Y. T. Wu, Y. Y. Chiu, Shirota Riichiro, T. M. Kuo, J. H. Chang, P. Y. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

An elementary step of trap and detrap processes of electron in the tunnel oxide during program/erase in NAND Flash memory is precisely studied. Owing to the high electric field during program and erase (P/E), the electron trapping and detrapping occur at the same time. Consequently, the detrapping process only leaves electrons in the deeper trap energy state (Etrap) than 3.5 eV. In addition, as-grown trap density (Ne) and capture cross section (σ) in the deep trap state can be specified to explain the measured data including the tunneling current modulation with cycling and the VT shift by oxide trap. The P/E endurance characteristics using dry and plasma oxidation processes are analyzed and compared. In both processes, σ has the same value (4×10-17 cm2). However, Ne depends on the oxidation process. In dry oxidation, Ne is 1.88×1019 cm-3. On the other hand, in plasma oxidation, 30% reduction (1.25×1019 cm-3) can be found.

Original languageEnglish
Title of host publication2016 IEEE 8th International Memory Workshop, IMW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467388313
DOIs
StatePublished - 15 Jun 2016
Event8th IEEE International Memory Workshop, IMW 2016 - Paris, France
Duration: 15 May 201618 May 2016

Publication series

Name2016 IEEE 8th International Memory Workshop, IMW 2016

Conference

Conference8th IEEE International Memory Workshop, IMW 2016
CountryFrance
CityParis
Period15/05/1618/05/16

Keywords

  • Flash memory reliability
  • plasma oxidation
  • trap

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    Yang, B. J., Wu, Y. T., Chiu, Y. Y., Riichiro, S., Kuo, T. M., Chang, J. H., & Wang, P. Y. (2016). Analytical Model to Evaluate the Role of Deep Trap State in the Reliability of NAND Flash Memory and Its Process Dependence. In 2016 IEEE 8th International Memory Workshop, IMW 2016 [7493567] (2016 IEEE 8th International Memory Workshop, IMW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMW.2016.7493567