Analytical model of subthreshold drain current characteristics of ballistic silicon nanowire transistors

Wanjie Xu, Hei Wong*, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

Original languageEnglish
Article number605987
JournalAdvances in Condensed Matter Physics
Volume2015
DOIs
StatePublished - 2015

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