Analytical model of subthreshold current and threshold voltage for fully depleted double-gated junctionless transistor

Zer Ming Lin, Horng-Chih Lin*, Keng Ming Liu, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

In this study, we derive an analytical model of an electric potential of a double-gated (DG) fully depleted (FD) junctionless (J-less) transistor by solving the two-dimensional Poisson's equation. On the basis of this two-dimensional electric potential model, subthreshold current and swing can be calculated. Threshold voltage roll-off can also be estimated with analytical forms derived using the above model. The calculated results of electric potential, subthreshold current and threshold voltage roll-off are all in good agreement with the results of technology computer aided design (TCAD) simulation. The model proposed in this paper may help in the development of a compact model for simulation program with integrated circuit emphasis (SPICE) simulation and in providing deeper insights into the characteristics of short-channel J-less transistors.

Original languageEnglish
Article number02BC14
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
StatePublished - 1 Feb 2012

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