Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances

Hiroshi Iwai, Mark R. Pinto, Conor S. Rafferty, John E. Oristian, Robert W. Dutton

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

In order to analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree well. The causes of short-channel effects have been understood and explained by the simulations. Two-dimensional effects and velocity saturation are the main causes of short-channel effects in MOS transistor capacitances. Two-dimensional simulation was found to be a useful tool for studying mobility models, as well as for obtaining capacitance models for circuit simulation.

Original languageEnglish
Pages (from-to)173-184
Number of pages12
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume6
Issue number2
DOIs
StatePublished - Mar 1987

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