Analysis of variation in leakage currents of Lanthana thin films

Yongshik Kim*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Lanthana (La2O3) films were deposited by E-beam evaporation on n-Si(1 0 0). Conduction mechanisms for the as-deposited film have been investigated. In order to study the annealing effect of the as-deposited films on the conduction mechanisms, some films were annealed in an ex situ way at different temperatures with nitrogen or oxygen gas flow for 5 min. From current-voltage measurement of the as-deposited films, extremely low gate oxide leakage currents were observed while some films showed variation in the scale of the currents. It is shown that all the currents of as-deposited films obey the same conduction mechanisms irrelevant of the magnitude of the leakage currents. From the electric field and temperature dependences of the currents of the gate oxide, it is shown that the main conduction mechanisms are the space-charge limited current (SCLC) at low oxide field region and Fowler-Nordheim (F-N) conduction at high oxide field region. It is also shown that conduction mechanisms of the nitrogen annealed films were basically the same as those of the as-deposited films although the magnitude of the conduction current and flat-band voltage (VFB) are different.

Original languageEnglish
Pages (from-to)825-833
Number of pages9
JournalSolid-State Electronics
Issue number5
StatePublished - May 2005


  • Conduction
  • E-beam
  • Fowler-Nordheim
  • High-k
  • LaO
  • Space-charge limited

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