Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by firstprinciples calculations

Huang Hsiang Lin, Pei Kang Chung, Shun-Tung Yen

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes.

Original languageEnglish
Article number045901
JournalMaterials Research Express
Volume1
Issue number4
DOIs
StatePublished - 3 Oct 2014

Keywords

  • Density of states
  • Far infrared
  • Gallium arsenide
  • Indium phosphide
  • Two-phonon processes
  • Van Hove singularity

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