Analysis of threshold voltage variations of FinFETs relating to short channel effects

Y. Kobayashi*, Angada B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmei, V. Ramgopal Rao, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Clarification of robustness for threshold voltage (Vth) variation in FinFETs is very important. Vth variation (ΔVth) caused by fluctuations of some principal device parameters are evaluated, compared to the planar MOSFETs. However, the origin of ΔVth is complex in short channel devices due to contribution of short channel effects (SCEs). Therefore, the origin of ΔVth is separated into two factors, that is, intrinsic factor which can be determined by Poisson's equation along M-O-S stack, called the 1D factor, and factors caused by SCEs, called 2D factors. The ΔVth is dominated by both factors on the planar MOSFETs, while it is dominated by the 2D factor on the FinFETs because the amount of spacer charge in the channel is small. Additionally, the ΔVth is studied in two advanced FinFET structures which show reduced SCEs.

Original languageEnglish
Title of host publicationECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
Pages23-27
Number of pages5
Edition40
DOIs
StatePublished - 2009
EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number40
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSolid State - General - 214th ECS Meeting/RRiME 2008
CountryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

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