Analysis of threshold voltage variations in fin field effect transistors

Kazuo Tsutsui*, Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, Ramgopal V. Rao, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To conduct analyses of variability of threshold voltage (Vth) in FinFETs whose structures are based on the ITRS, sensitivity coefficients of variations of Vth caused by the fluctuation of principal device parameters were derived by device simulation. The sensitivity coefficient correlated with each device parameter was separated into two factors: one due to an intrinsic mechanism (1D factor) and another due to short-channel effects (2D factor). The 1D and 2D factors were found to cancel each other out in some cases, thereby reducing the sensitivity coefficient. Based on these results, FinFETs with various structures were examined and controlling short-channel effects was demonstrated to be an effective way to reduce the variation in the threshold voltage.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Pages194-200
Number of pages7
ISBN (Print)9783037850510
DOIs
StatePublished - 2011

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Double gate
  • FinFET
  • Sensitivity
  • Short channel effect
  • Threshold voltage
  • Variability

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