Analysis of the Temperature Dependence of Hot-Carrier-Induced Degradation in Bipolar Transistors for Bi-CMOS

Hisayo Sasaki Momose, Hiroshi Iwai

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The temperature dependence of emitter-base reverse stress degradation in bipolar transistors for Bi-CMOS circuits was studied. A suitable measure of degradation in the operating temperature range was chosen after careful consideration of the fact that bipolar transistor characteristics are very sensitive to temperature changes. The worst-case temperature conditions within the transistors’ operating range were determined. Degradation was found to be worst at around 50° C—a result of a tradeoff between thermal recovery from degradation and the effects of bandgap narrowing on bipolar characteristics. The recovery phenomena after degradation had taken place were also investigated in detail.

Original languageEnglish
Pages (from-to)978-987
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume41
Issue number6
DOIs
StatePublished - Jun 1994

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