Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian-Li Wu*, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, Nicolò Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we have observed that the C-V behavior depends on the different processing conditions of the p-GaN gate. Second, a two-junction capacitor model considering a series connection of the Schottky metal/p-GaN junction capacitor and the AlGaN barrier capacitor is proposed to explain this C-V behavior. Based on this model, the junction capacitance has an influence on the total capacitance value under a high gate bias due to the Schottky metal/p-GaN junction. Furthermore, the Mg-concentration and hole density can be extracted. The extracted hole density is consistent with the results obtained by Hall measurements.

Original languageEnglish
Article number8089745
Pages (from-to)1696-1699
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number12
DOIs
StatePublished - 1 Dec 2017

Keywords

  • C-V characteristics
  • p-GaN/AlGaN/GaN heterostructure

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