Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

M. Meneghini*, C. De Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, Daisuke Ueda, G. Meneghesso, E. Zanoni

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. The aim of this paper is to show - by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VII
DOIs
StatePublished - 16 Apr 2012
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: 23 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8262
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VII
CountryUnited States
CitySan Francisco, CA
Period23/01/1226/01/12

Keywords

  • defect
  • degradation
  • DLTS
  • InGaN
  • laser diode

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    Meneghini, M., De Santi, C., Trivellin, N., Orita, K., Takigawa, S., Tanaka, T., Ueda, D., Meneghesso, G., & Zanoni, E. (2012). Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS. In Gallium Nitride Materials and Devices VII [826215] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262). https://doi.org/10.1117/12.906551