Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates

Xinke Liu, Hao Yu Wang, Hsien Chin Chiu*, Yuxuan Chen, Dabing Li, Chong Rong Huang, Hsuan Ling Kao, Hao Chung Kuo, Sung Wen Huang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using free-standing GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current (700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer.

Original languageEnglish
Article number152293
JournalJournal of Alloys and Compounds
Volume814
DOIs
StatePublished - 25 Jan 2020

Keywords

  • Back barrier
  • GaN on GaN
  • HEMT
  • Microwave
  • Raman

Fingerprint Dive into the research topics of 'Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates'. Together they form a unique fingerprint.

  • Cite this