Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling

Pei-Wen Li*, W. M. Liao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Short-channel effects of Si 1-xGe x p-channel MOSFETs have been examined by two-dimensional computer simulation. It is found that devices incorporating SiGe channel offer worthwhile advantages in device performance and scalability. In addition to enhanced drive current due to higher hole mobility, Si 1-xGe x p-channel MOSFETs also provide better carrier confinement in the Si/SiGe quantum well, which leads to lower gate-controlled depletion charge and electric field in the subsurface. These in turn suppress the drain-induced barrier lowering and punch through effects in SiGe pMOSFETs compared to the bulk Si devices at the same physical dimension. Higher device performance and better scalability make Si 1-xGe x p-channel MOSFETs a great benefit for high-speed and low-power CMOS circuit applications.

Original languageEnglish
Pages (from-to)39-44
Number of pages6
JournalSolid-State Electronics
Volume46
Issue number1
DOIs
StatePublished - 1 Jan 2002

Keywords

  • MOSFETs
  • Short-channel effect
  • SiGe

Fingerprint Dive into the research topics of 'Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling'. Together they form a unique fingerprint.

Cite this