Analysis of SiC IMPATT device in millimeter-wave frequencies

Chin-Chun Meng*, G. R. Liao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


SiC IMPATT devices have an efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type large-signal model. The simulation demonstrates that the efficiency (and dc power density) at operating temperature (800 K) for SiC p +n single-drift flat-profile IMPATT structures is 12.4% (6.7 MW/cm2), 15% (4.5 MW/cm2), and 15.8% (3.3 MW/cm2) for frequencies of 200, 100, and 50 GHz, respectively.

Original languageEnglish
Pages (from-to)167-168
Number of pages2
JournalMicrowave and Optical Technology Letters
Issue number3
StatePublished - 20 Jun 1998


  • IMPATT device
  • Millimeter wave
  • Oscillator
  • SiC

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