Analysis of power-performance for Ultra-Thin-Body GeOI logic circuits

Vita Pi Ho Hu*, Ming Long Fan, Pin Su, Ching Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This work analyzes the power-performance of the emerging Ultra-Thin-Body (UTB) GeOI devices for logic circuit applications. The impacts of temperature and Vdd scaling on the leakage/delay are studied. Compared with the subthreshold leakage dominated SOI devices/circuits, the band-to-band tunneling dominated leakage currents of GeOI devices/circuits show less sensitivity to temperature. At 300°K and comparable delay, GeOI inverter with smaller band-gap shows larger leakage than the SOI inverter at Vdd 1.0V, while exhibits lower leakage than the SOI inverter at Vdd 0.8V. At 400°K, GeOI inverter shows both lower leakage and lower delay at Vdd 0.6∼1.0V compared with the SOI counterpart, due to the weaker temperature dependence of band-to-band tunneling leakage compared with subthreshold leakage. Compared with the SOI Two-Way NAND and NOR, the GeOI Two-Way NAND and NOR show smaller leakage currents at Vdd =0.5V or 400°K as the band-to-band tunneling leakage is less sensitive to temperature compared with the subthreshold leakage. Compared with the GeOI domino gate at 400K, the SOI domino gate shows 5 times degradation in the worst-case noise (dynamic node voltage droop) and 1.4 times increase in the worst-case delay. The GeOI latch leakages are smaller than the SOI counterparts at 300°K (Vdd < 0.8V) and 400°K (Vdd =0.5∼1.0V).

Original languageEnglish
Title of host publicationIEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2011
Pages115-120
Number of pages6
DOIs
StatePublished - 19 Sep 2011
Event17th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2011 - Fukuoka, Japan
Duration: 1 Aug 20113 Aug 2011

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Conference

Conference17th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2011
CountryJapan
CityFukuoka
Period1/08/113/08/11

Keywords

  • Germanium-On-Insulator (GeOI)
  • Ultra-Thin-Body (UTB)
  • band-to-band tunneling
  • logic circuits
  • power-performance

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