Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO2-based gate dielectrics

Ching En Chen; Ting Chang Chang; Bo You; Jyun Yu Tsai; Wen Hung Lo; Szu Han Ho; Kuan Ju Liu; Ying Hsin Lu; Xi Wen Liu; Yu Ju Hung; Tseung-Yuen Tseng; Osbert Cheng; Cheng Tung Huang; Ching Sen Lu

doi:10.1109/LED.2016.2535900

Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO₂-based gate dielectrics

Ching En Chen, Ting Chang Chang, Bo You, Jyun Yu Tsai, Wen Hung Lo, Szu Han Ho, Kuan Ju Liu, Ying Hsin Lu, Xi Wen Liu, Yu Ju Hung, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Ching Sen Lu

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO₂ and Hf_1-xZr_xO₂/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO₂-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO₂-based devices (HfO₂ and Hf_1-xZr_xO₂).

Original language	English
Article number	7421987
Pages (from-to)	359-362
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/LED.2016.2535900
State	Published - 1 Apr 2016

Keywords

HfZrO
HfO
Metal-oxide-semiconductor field-effect transistors (MOSFETs)
Multiphonon emission theory
Random telegraph signal (RTS)
Relaxation energy

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Chen, C. E., Chang, T. C., You, B., Tsai, J. Y., Lo, W. H., Ho, S. H., Liu, K. J., Lu, Y. H., Liu, X. W., Hung, Y. J., Tseng, T-Y., Cheng, O., Huang, C. T., & Lu, C. S. (2016). Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO₂-based gate dielectrics. IEEE Electron Device Letters, 37(4), 359-362. [7421987]. https://doi.org/10.1109/LED.2016.2535900

Chen, Ching En ; Chang, Ting Chang ; You, Bo ; Tsai, Jyun Yu ; Lo, Wen Hung ; Ho, Szu Han ; Liu, Kuan Ju ; Lu, Ying Hsin ; Liu, Xi Wen ; Hung, Yu Ju ; Tseng, Tseung-Yuen ; Cheng, Osbert ; Huang, Cheng Tung ; Lu, Ching Sen. / Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO₂-based gate dielectrics. In: IEEE Electron Device Letters. 2016 ; Vol. 37, No. 4. pp. 359-362.

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title = "Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO2-based gate dielectrics",

abstract = "This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf1-xZrxO2/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf1-xZrxO2).",

keywords = "HfZrO, HfO, Metal-oxide-semiconductor field-effect transistors (MOSFETs), Multiphonon emission theory, Random telegraph signal (RTS), Relaxation energy",

author = "Chen, {Ching En} and Chang, {Ting Chang} and Bo You and Tsai, {Jyun Yu} and Lo, {Wen Hung} and Ho, {Szu Han} and Liu, {Kuan Ju} and Lu, {Ying Hsin} and Liu, {Xi Wen} and Hung, {Yu Ju} and Tseung-Yuen Tseng and Osbert Cheng and Huang, {Cheng Tung} and Lu, {Ching Sen}",

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Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO₂-based gate dielectrics. / Chen, Ching En; Chang, Ting Chang; You, Bo; Tsai, Jyun Yu; Lo, Wen Hung; Ho, Szu Han; Liu, Kuan Ju; Lu, Ying Hsin; Liu, Xi Wen; Hung, Yu Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng Tung; Lu, Ching Sen.

In: IEEE Electron Device Letters, Vol. 37, No. 4, 7421987, 01.04.2016, p. 359-362.

Research output: Contribution to journal › Article › peer-review

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AU - Chen, Ching En

AU - Chang, Ting Chang

AU - You, Bo

AU - Tsai, Jyun Yu

AU - Lo, Wen Hung

AU - Ho, Szu Han

AU - Liu, Kuan Ju

AU - Lu, Ying Hsin

AU - Liu, Xi Wen

AU - Hung, Yu Ju

AU - Tseng, Tseung-Yuen

AU - Cheng, Osbert

AU - Huang, Cheng Tung

AU - Lu, Ching Sen

PY - 2016/4/1

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N2 - This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf1-xZrxO2/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf1-xZrxO2).

AB - This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf1-xZrxO2/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf1-xZrxO2).

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