Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO2-based gate dielectrics

Ching En Chen, Ting Chang Chang, Bo You, Jyun Yu Tsai, Wen Hung Lo, Szu Han Ho, Kuan Ju Liu, Ying Hsin Lu, Xi Wen Liu, Yu Ju Hung, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Ching Sen Lu

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Abstract

This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf1-xZrxO2/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf1-xZrxO2).

Original languageEnglish
Article number7421987
Pages (from-to)359-362
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
StatePublished - 1 Apr 2016

Keywords

  • HfZrO
  • HfO
  • Metal-oxide-semiconductor field-effect transistors (MOSFETs)
  • Multiphonon emission theory
  • Random telegraph signal (RTS)
  • Relaxation energy

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    Chen, C. E., Chang, T. C., You, B., Tsai, J. Y., Lo, W. H., Ho, S. H., Liu, K. J., Lu, Y. H., Liu, X. W., Hung, Y. J., Tseng, T-Y., Cheng, O., Huang, C. T., & Lu, C. S. (2016). Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO2-based gate dielectrics. IEEE Electron Device Letters, 37(4), 359-362. [7421987]. https://doi.org/10.1109/LED.2016.2535900