Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling

Kuan Chin Yu, Ming Long Fan, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
StatePublished - 3 Jun 2015
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
Duration: 27 Apr 201529 Apr 2015

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
CountryTaiwan
CityHsinchu
Period27/04/1529/04/15

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