Analysis of millimeter-wave gan impatt oscillator at elevated temperature

Chin-Chun Meng*, G. R. Liao, J. W. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


GaN is a suitable material for millimeter-wave high-power IMP ATT oscillators because of its superior electronic properties-high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read-type large-signal model. Tlie power density of GaN IMPATT devices at millimeter-wave frequencies is m-o orders magnitude higher than that of conventional GaAs and Si IMPATT devices. Tlie simulations showed that GaN wurtzite phase p +-n single-drift fiat-profile IMPATT oscillators at 300 GHz have an efficiency of 11% and an RFpower density of 1.6 MW/'cm2 when operated at 800 K.

Original languageEnglish
Pages (from-to)257-259
Number of pages3
JournalMicrowave and Optical Technology Letters
Issue number4
StatePublished - 20 Nov 1999


  • Gan
  • IMPATT decke
  • Millimeter wave
  • Oscillator

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