GaN is a suitable material for millimeter-wave high-power IMP ATT oscillators because of its superior electronic properties-high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read-type large-signal model. Tlie power density of GaN IMPATT devices at millimeter-wave frequencies is m-o orders magnitude higher than that of conventional GaAs and Si IMPATT devices. Tlie simulations showed that GaN wurtzite phase p +-n single-drift fiat-profile IMPATT oscillators at 300 GHz have an efficiency of 11% and an RFpower density of 1.6 MW/'cm2 when operated at 800 K.
|Number of pages||3|
|Journal||Microwave and Optical Technology Letters|
|State||Published - 20 Nov 1999|
- IMPATT decke
- Millimeter wave