Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

Kazuo Tsutsui*, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750-775 °C as a result of agglomeration related to phase transition from NiSi to NiSi2. Experiments on the effect of temperature, heating rate and annealing duration in rapid thermal annealing revealed that the high-resistance state produced by annealing at the critical temperature could not be changed by subsequent annealing at higher temperature, and that the high-resistance state required 30-40 s at the critical temperature to form. Pre-annealing at 600 °C was found to suppress the later formation of the high-resistance state.

Original languageEnglish
Pages (from-to)315-319
Number of pages5
JournalMicroelectronic Engineering
Volume85
Issue number2
DOIs
StatePublished - Feb 2008

Keywords

  • Agglomeration
  • Ni silicide
  • Phase transition
  • Sheet resistance
  • Thermal stability

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