Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn-Fang Chen*, Nie Chuan Chen, Wen Yen Huang, Wei-I Lee, Ming Shiann Feng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number7 PART A
DOIs
StatePublished - 1 Jul 1996

Keywords

  • Deep levels
  • GaN
  • OMVPE
  • Transient capacitance

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