Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Jenn-Fang Chen*, Nie Chuan Chen, Wen Yen Huang, Wei-I Lee, Ming Shiann Feng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.

Original languageEnglish
Pages (from-to)L810-L812
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number7 PART A
DOIs
StatePublished - 1 Jul 1996

Keywords

  • Deep levels
  • GaN
  • OMVPE
  • Transient capacitance

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