The transient capacitance method was used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27eV were observed in the TMGa sample, while a deep level at 0.60eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||7 PART A|
|State||Published - 1 Jul 1996|
- Deep levels
- Transient capacitance