Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Chiung Chih Hsu*, Ray-Quen Hsu, Yue Han Wu, Tung Wei Chi, Chen Hao Chiang, Jenn-Fang Chen, Mao Nan Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties.

Original languageAmerican English
Pages (from-to)1495-1499
Number of pages5
JournalUltramicroscopy
Volume108
Issue number11
DOIs
StatePublished - 1 Oct 2008

Keywords

  • Molecular beam epitaxy
  • PL
  • Quantum dots
  • TEM

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