Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices

Ping Hsun Su, Yi-Ming Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This research explores the electrical characteristics of the unity gain frequency (Ft) in relation to the experimental in-line process parameters of 16-nm high-κ metal gate bulk fin-type field effect transistor devices. Because Ft is dependent on the transconductance (Gm) and effective gate capacitance (Cgg), a sensitivity analysis of these two factors is applied to determine key in-line process parameters. The engineering results of this letter indicate that Gm and Cgg are significantly fluctuated by six in-line process parameters, including the gate length, fin height, high-κ/interfacial layer thickness, source/drain (S/D) proximity, S/D depth, and gate height. These six parameters fluctuate Ft at the same time, with Gm as the dominant factor.

Original languageEnglish
Pages (from-to)335-338
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number3
DOIs
StatePublished - Mar 2018

Keywords

  • bulk FinFETs
  • characteristic fluctuation
  • In-line process parameters
  • transconductance
  • unity gain frequency
  • VARIABILITY
  • SENSITIVITY

Fingerprint Dive into the research topics of 'Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices'. Together they form a unique fingerprint.

Cite this