Analysis of high-field hole transport characteristics in Si 1-x Ge x alloys with a bond orbital band structure

Tsyr Shyang Liou*, Ta-Hui Wang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We present an analysis of high-field hole transport in strained Si 1-x Ge x alloys using a Monte Carlo technique. A bond orbital model is employed to calculate the valence-band structure in the simulation so that the transport behavior of high-energy holes can be described accurately. The model combines the k·p and the tight binding methods and contains no fitting parameters. The spin-orbit interaction and lattice-mismatch-induced biaxial compressive strain are included in the model. The steady-state hole drift velocity and the impact ionization rate are calculated as a function of an electric field up to 500 kV/cm. Good agreement between experiment and simulation is obtained.

Original languageEnglish
Pages (from-to)259-263
Number of pages5
JournalJournal of Applied Physics
Volume79
Issue number1
DOIs
StatePublished - 1 Jan 1996

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