Analysis of formation of hafnium silicide on silicon

C. J. Kircher*, J. W. Mayer, King-Ning Tu, J. F. Ziegler

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species.

Original languageEnglish
Pages (from-to)81-83
Number of pages3
JournalApplied Physics Letters
Volume22
Issue number2
DOIs
StatePublished - 1 Dec 1973

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