Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Yusuke Kobayashi*, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A systematic study of the dependence of short-channel effects (SCEs) on the channel thickness (Tch) of double-gate MOSFETs revealed that there is a particular range of Tch in which SCEs are significantly degraded compared to those of conventional planar MOSFETs. This phenomenon was found to originate from the electric field penetrating the channel region from the drain due to the disappearance of a neutral region in the channel. This dependence of this phenomenon on device parameters such as the channel doping concentration (Nc), the equivalent oxide thickness (EOT) and the gate length (Lg) was examined. The degradation of SCEs due to an inappropriate Tch was found to become more significant as Nc and Lg are reduced.

Original languageEnglish
Pages (from-to)332-337
Number of pages6
JournalMicroelectronics Reliability
Volume50
Issue number3
DOIs
StatePublished - Mar 2010

Fingerprint Dive into the research topics of 'Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness'. Together they form a unique fingerprint.

Cite this