Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations

Chin-Chun Meng*, J. Y. Su, S. M. Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior. GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter Cgs while gate contour affects Cgd. The breakdown voltage has strong dependence on gate contour and little dependence on gate length.

Original languageEnglish
Pages (from-to)6389-6394
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number9 A
DOIs
StatePublished - 8 Sep 2005

Keywords

  • GaAs MESFET
  • Small signal equivalent circuit and 2-D device simulation

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