Analysis of damage created by ion implantation in GaAs using process simulation

Keijiro Itakura*, Yukiharu Shimamoto, Shigeru Okamoto, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Compensation profile in ion-implanted GaAs has been analyzed by the simulation based on the Boltzmann transport equation. Comparing the simulations with experiments, we found that the compensation profile was originated in two types of defect distribution. One was created by deposited energy and the other was created by the implanted ions in the material. These two compensation profiles have two different energy levels, since the so-called L band splits into two peaks in deep level transient spectroscopy after annealing the sample. Based on the simulated results, we also introduced two different compensation yields of ion implantation.

Original languageEnglish
Pages (from-to)3512-3515
Number of pages4
JournalJournal of Applied Physics
Issue number7
StatePublished - 1 Dec 1991

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