Analysis of carrier transport in trigate Si nanowire MOSFETs

Wei Ting Lai*, Chia Wei Wu, Cheng Chih Lin, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Trigate Si nanowire (NW) MOSFETs have been fabricated and characterized at temperature between 77 and 300 K in the dark and under light pumping. The NW width W and height H, the gate length Lg, and the gate oxide thickness tox, respectively, were 725, 16, 3452, and 7 nm. The interesting aspects of Si NW MOSFETs with Wg=25nm52nm, 24 nm/34 nm, 7 nm/47 nm, and 10 nm/37 nm measured at low drain voltage are that the drain current exhibited not only inverse temperature dependence in strong accumulation but also clear current plateaus/oscillations near the threshold regime at temperature up to 300 K. Notably, such current plateaus diminished or were invisible in the device of Wgnm 24nm 42nm. The observed current behaviors are inferred from the interplay of quantum interference and intersubband scattering effects. Additional current plateaus due to photogenerated excitons were also observed in the studied devices, evidencing photoexcitation effects on quantum transports through a Si NW.

Original languageEnglish
Article number5730483
Pages (from-to)1336-1343
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number5
DOIs
StatePublished - 1 May 2011

Keywords

  • Intersubband scattering
  • photoexcitation
  • quantum interference
  • silicon nanowire (Si NW)

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