Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Szu Han Ho*, Ting Chang Chang, Ying Shin Lu, Wen Hung Lo, Ching En Chen, Jyun Yu Tsai, Hua Mao Chen, Chi Wei Wu, Hung Ping Luo, Guan Ru Liu, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This letter investigates anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors. N-Vhigh level characteristic curves with different duty ratios indicate that the electron discharge time dominates the value of N for extra traps. By fitting ln (N (tbase level 2.5 μ s)-N (tbase level))-Δt base level at different temperatures and computing the equation t τ0 exp (αe,SiO2d SiO2 αe,HfO2d HfO2,trap), results show that these extra traps measured by the charge pumping technique at high voltage can be attributed to high-k bulk shallow traps.

Original languageEnglish
Article number233509
JournalApplied Physics Letters
Volume101
Issue number23
DOIs
StatePublished - 3 Dec 2012

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