Analysis of an ONO gate film effect on n- and p-MOSFET mobilities

H. Iwai*, H. S. Momose, S. Takagi, T. Morimoto, S. Kitagawa, S. Kambayashi, K. Yamabe, S. Onga

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

The effect of the nitrogen atoms in the gate oxide and why gate oxide nitridation acts oppositely on the n- and p-MOSFET mobilities were studied. It was found that the mobility changes for the oxide/nitride/oxide (ONO) gate MOSFETs are not caused by the high-temperature process during the rapid thermal process (RTP), but rather are caused by the involvement of the nitrogen atoms in the gate oxide. The interfacial structures were observed by TEM. Although some interfacial structure difference was observed, there was no major difference in surface roughness between 'PO' and 'NO' samples. The opposite effect of the ONO gate films on the n- and p-MOSFET mobilities cannot be explained completely by a donor layer formation by the nitrogen diffusion into the substrate. The effect might be explained by the residual mechanical stress caused by the involvement of the nitrogen atoms in the gate oxide.

Original languageEnglish
Article number5727503
Pages (from-to)131-132
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1990
Event1990 Symposium on VLSI Technology - Honolulu, HI, United States
Duration: 4 Jun 19907 Jun 1990

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