Analysis of an anomalous hump in gate current after dynamic negative bias stress in Hf xZr 1-xO 2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Szu Han Ho*, Ting Chang Chang, Chi Wei Wu, Wen Hung Lo, Ching En Chen, Jyun Yu Tsai, Hung Ping Luo, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in Hf xZr 1-xO 2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula E high-k high-k Q E sio2sio2.

Original languageEnglish
Article number052105
JournalApplied Physics Letters
Volume101
Issue number5
DOIs
StatePublished - 30 Jul 2012

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