Analysis of AC electrical response for radio-frequency sputtered (Ba0.5Sr0.5)TiO3 thin film

Yin Pin Wang; Tseung-Yuen Tseng

doi:10.1016/S0040-6090(98)01497-7

Analysis of AC electrical response for radio-frequency sputtered (Ba_0.5Sr_0.5)TiO₃ thin film

Yin Pin Wang, Tseung-Yuen Tseng

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Through the measurement of dielectric dispersion as a function of frequency (100 Hz≤f≤1 MHz), we investigated the trapping dielectric relaxation of r.f.-sputtered (Ba_0.5Sr_0.5)TiO₃ film and proposed an equivalent circuit on the basis of the admittance and capacitance spectra. Admittance spectral studies in the temperature range of 200-420 K revealed the existence of a trap level. The trap, located at 0.05 eV, is envisaged to be responsible for the origin of dielectric relaxation and carder concentration. The equivalent circuit, consisting of a series trapping resistance and capacitance combination in parallel with leakage resistance and high frequency limit capacitance, is adopted to explain satisfactorily the AC response and to identify the contribution of the shallow trap on the electrical properties of BST thin film.

Original language	English
Pages (from-to)	269-274
Number of pages	6
Journal	Thin Solid Films
Volume	346
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(98)01497-7
State	Published - 1 Jun 1999

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abstract = "Through the measurement of dielectric dispersion as a function of frequency (100 Hz≤f≤1 MHz), we investigated the trapping dielectric relaxation of r.f.-sputtered (Ba0.5Sr0.5)TiO3 film and proposed an equivalent circuit on the basis of the admittance and capacitance spectra. Admittance spectral studies in the temperature range of 200-420 K revealed the existence of a trap level. The trap, located at 0.05 eV, is envisaged to be responsible for the origin of dielectric relaxation and carder concentration. The equivalent circuit, consisting of a series trapping resistance and capacitance combination in parallel with leakage resistance and high frequency limit capacitance, is adopted to explain satisfactorily the AC response and to identify the contribution of the shallow trap on the electrical properties of BST thin film.",

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AB - Through the measurement of dielectric dispersion as a function of frequency (100 Hz≤f≤1 MHz), we investigated the trapping dielectric relaxation of r.f.-sputtered (Ba0.5Sr0.5)TiO3 film and proposed an equivalent circuit on the basis of the admittance and capacitance spectra. Admittance spectral studies in the temperature range of 200-420 K revealed the existence of a trap level. The trap, located at 0.05 eV, is envisaged to be responsible for the origin of dielectric relaxation and carder concentration. The equivalent circuit, consisting of a series trapping resistance and capacitance combination in parallel with leakage resistance and high frequency limit capacitance, is adopted to explain satisfactorily the AC response and to identify the contribution of the shallow trap on the electrical properties of BST thin film.

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Analysis of AC electrical response for radio-frequency sputtered (Ba_0.5Sr_0.5)TiO₃ thin film

Abstract

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