Analysis and simulation of the postbreakdown I-V characteristics of n-MOS transistors in the linear response regime

Enrique A. Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A simple yet accurate model for the postbreakdown output characteristics of advanced n-MOS transistors with metal gate (W) and high-κ(La 2O3, equivalent oxide thickness = 0.6 nm) gate insulator is reported. The model specifically deals with the so-called linear response regime in which the transistor action is no longer operative after the failure event. By analyzing three particular cases of interest, it is shown that the proposed model is able to account for the conduction characteristics corresponding to failure sites located both at the center of the channel region and close to the source and drain contacts. A compact model for the bulk-drain current is included in order to simulate the departure from linearity occurring at the negative drain bias.

Original languageEnglish
Article number6513237
Pages (from-to)798-800
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number6
DOIs
StatePublished - 2013

Keywords

  • Metal oxide semiconductor field-effect transistor (MOSFET)
  • MOS
  • oxide breakdown
  • reliability

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