Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

S. Khandelwal*, Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.

Original languageEnglish
Title of host publication2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
DOIs
StatePublished - 18 May 2012
Event2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico
Duration: 14 Mar 201217 Mar 2012

Publication series

Name2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Conference

Conference2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
CountryMexico
CityPlaya del Carmen
Period14/03/1217/03/12

Keywords

  • BSIM6
  • Body Bias Effect
  • Compact Models
  • Vertical Non-uniform Doping

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    Khandelwal, S., Chauhan, Y. S., Karim, M. A., Venugopalan, S., Sachid, A., Niknejad, A., & Hu, C-M. (2012). Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 [6188935] (2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012). https://doi.org/10.1109/ICCDCS.2012.6188935