Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs

Chetan Gupta*, Sagnik Dey, Harshit Agarwal, Ravi Goel, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


We present an analytical model that accurately captures anomalous matching characteristics of drain current in a halo-implanted MOSFET across bias, geometry, and temperature. It is shown that the variation in drain current in different gate bias regimes results from the random-dopant fluctuations (RDFs) in different spatial regions across the channel of the device with nonuniform channel doping. Such effects cannot be captured by existing compact models. Using the impedance field method to calculate the relative contributions of the RDF in the higher doped halo region and the lower doped channel region, we demonstrate, for the first time, an analytical model that can successfully capture the drain current mismatch from subthreshold to strong inversion. We also report for the first time the unique temperature dependence of matching of the drain current in halo-implanted devices and propose a model to capture this behavior. The model is validated using extensive technology computer-aided design analysis and experimental data and is can be extended to the framework of the industry standard BSIM-BULK (formerly BSIM6) MOS model.

Original languageEnglish
Article number8418463
Pages (from-to)3608-3616
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number9
StatePublished - 1 Sep 2018


  • BSIM6
  • compact model
  • drain-induced threshold shift (DITS)
  • halo
  • mismatch

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