Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS

Ren Jia Chan; Jyh-Chyurn Guo

doi:10.1109/EuMIC.2014.6997779

Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS

Ren Jia Chan, Jyh-Chyurn Guo

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Z_in) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z_in) and Q measured from mm-wave inductor (L_dc∼150pH, Q_max ∼17, f_SR>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

Original language	English
Title of host publication	European Microwave Week 2014
Subtitle of host publication	"Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	13-16
Number of pages	4
ISBN (Electronic)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997779
State	Published - 23 Dec 2014
Event	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy Duration: 6 Oct 2014 → 7 Oct 2014

Publication series

Name	European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference

Conference

Conference	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Country	Italy
City	Rome
Period	6/10/14 → 7/10/14

Keywords

Analytical model
CMOS
mm-wave inductor
proximity
skin

Access to Document

10.1109/EuMIC.2014.6997779

Link to publication in Scopus

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Chan, R. J., & Guo, J-C. (2014). Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 13-16). [6997779] (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2014.6997779

Chan, Ren Jia ; Guo, Jyh-Chyurn. / Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS. European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 13-16 (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference).

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title = "Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS",

abstract = "Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Zin) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (Ldc∼150pH, Qmax ∼17, fSR>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.",

keywords = "Analytical model, CMOS, mm-wave inductor, proximity, skin",

author = "Chan, {Ren Jia} and Jyh-Chyurn Guo",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

note = "null ; Conference date: 06-10-2014 Through 07-10-2014",

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Chan, RJ & Guo, J-C 2014, Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference., 6997779, European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 13-16, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 6/10/14. https://doi.org/10.1109/EuMIC.2014.6997779

Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS. / Chan, Ren Jia; Guo, Jyh-Chyurn.

European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 13-16 6997779 (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Guo, Jyh-Chyurn

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Y1 - 2014/12/23

N2 - Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Zin) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (Ldc∼150pH, Qmax ∼17, fSR>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

AB - Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Zin) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (Ldc∼150pH, Qmax ∼17, fSR>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

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KW - CMOS

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Chan RJ, Guo J-C. Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 13-16. 6997779. (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference). https://doi.org/10.1109/EuMIC.2014.6997779