Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs

Harshit Agarwal, Chetan Gupta, Yogesh S. Chauhan, Sourabh Khandelwal, Chen-Ming Hu, Sagnik Dey, Kaiman Chan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we demonstrate using extensive TCAD simulations that low frequency noise behavior is significantly different in presence of halo implants. The study of the noise behavior is extended to source side halo, drain side halo, symmetric halos and uniformly doped devices for different doping and length of the halo regions. Our study shows that source side halo region is responsible for the anomalous noise behavior in saturation. Such noise behavior can be accurately modeled with the presented SPICE model over wide range of biases and geometries. This study physically explains the trends observed in low frequency noise measurement in advanced CMOS technologies.

Original languageEnglish
Title of host publication2016 3rd International Conference on Emerging Electronics, ICEE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509036592
DOIs
StatePublished - 18 Oct 2017
Event3rd International Conference on Emerging Electronics, ICEE 2016 - Mumbai, India
Duration: 27 Dec 201630 Dec 2016

Publication series

Name2016 3rd International Conference on Emerging Electronics, ICEE 2016

Conference

Conference3rd International Conference on Emerging Electronics, ICEE 2016
CountryIndia
CityMumbai
Period27/12/1630/12/16

Keywords

  • Flicker Noise
  • Green Function
  • Halo Implants

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