Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Harshit Agarwal*, Pragya Kushwaha, Chetan Gupta, Sourabh Khandelwal, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalSolid-State Electronics
Volume115
DOIs
StatePublished - 1 Jan 2016

Keywords

  • Flicker noise
  • Impedance field
  • Lateral asymmetry
  • Non uniform doping

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