Analysis and modeling of capacitances in halo-implanted MOSFETs

Chetan Gupta, Harshit Agarwal, Sagnik Dey, Chen-Ming Hu, Yogesh S. Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

In this paper, we report the anomalous behavior of capacitances in halo channel MOSFET for the linear and saturation regions. Unlike MOSFETs these devices have different threshold voltage (VTH) for the DC and CV operations, and therefore cannot be modeled by conventional methods. We have investigated various cases of doping non-uniformity: Source side halo (SH), Drain side halo (DH), both side halos (Halo) and uniformly doped (UD) transistors using TCAD simulations under various bias conditions. A computationally efficient SPICE model is used to model these trends which shows excellent matching with the measured and TCAD data.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages198-200
Number of pages3
ISBN (Electronic)9781509046591
DOIs
StatePublished - 13 Jun 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 28 Feb 20172 Mar 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Conference

Conference2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period28/02/172/03/17

Keywords

  • BSIM6
  • Capacitances
  • Halo Doping

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