Analysis and Design of Triple-band Input Matching for CMOS Low-noise Amplifier

Chun Yi Lin, Ching Piao Liang, Pei Zong Rao, Shyh-Jong Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the analysis and design of a triple-band low-noise amplifier (LNA) fabricated in a 0.18 mu m CMOS process. The triple-band operation is achieved by adding a switch component in a dual-band input network of an LNA, so that it can function at 2.5, 3.5, and 5.2 GHz. The proposed method can effectively decrease the chip area as compared to conventional designs. In addition, based on the design procedures provided in this paper, the component values of the triple-band input network can be accurately calculated to reduce the complication of the circuit design.
Original languageEnglish
Title of host publicationProgress in Electromagnetics Research Symposium
Pages888-891
Number of pages4
StatePublished - 2012

Keywords

  • 1.5-V; LNA

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    Lin, C. Y., Liang, C. P., Rao, P. Z., & Chung, S-J. (2012). Analysis and Design of Triple-band Input Matching for CMOS Low-noise Amplifier. In Progress in Electromagnetics Research Symposium (pp. 888-891)